| PART |
Description |
Maker |
| S29GL512N10FFI013 S29GL512N10FFI012 S29GL256N11TFI |
3.0 Volt-only Page Mode Flash Memory featuring 110 nm MirrorBitProcess Technology 32M X 16 FLASH 3V PROM, 100 ns, PBGA64
3.0 Volt-only Page Mode Flash Memory featuring 110 nm MirrorBitProcess Technology 16M X 16 FLASH 3V PROM, 110 ns, PDSO56
3.0 Volt-only Page Mode Flash Memory featuring 110 nm MirrorBit??Process Technology
|
Spansion, Inc.
SPANSION LLC
|
| S29PL127N65GAWW02 S29PL127N65GAW003 S29PL127N65GAI |
256/128/128 Mb (16/8/8 M x 16-Bit) CMOS, 3.0 Volt-only Simultaneous Read/Write, Page-Mode Flash Memory 8M X 16 FLASH 3V PROM, 65 ns, PBGA64
256/128/128 Mb (16/8/8 M x 16-Bit) CMOS, 3.0 Volt-only Simultaneous Read/Write, Page-Mode Flash Memory 256/128/128字节6/8/8 M中的x 16位）.0伏的CMOS只同步读/写，页模式闪
256/128/128 Mb (16/8/8 M x 16-Bit) CMOS, 3.0 Volt-only Simultaneous Read/Write, Page-Mode Flash Memory 8M X 16 FLASH 3V PROM, 70 ns, PBGA64
256/128/128 Mb (16/8/8 M x 16-Bit) CMOS, 3.0 Volt-only Simultaneous Read/Write, Page-Mode Flash Memory 16M X 16 FLASH 3V PROM, 70 ns, PBGA84
256/128/128 Mb (16/8/8 M x 16-Bit) CMOS, 3.0 Volt-only Simultaneous Read/Write, Page-Mode Flash Memory 16M X 16 FLASH 3V PROM, 65 ns, PBGA84
|
Spansion, Inc.
Spansion Inc.
SPANSION LLC
|
| V53C318165A50 V53C318165A70 |
3.3 VOLT 1M X 16 EDO PAGE MODE CMOS DYNAMIC RAM
3.3 VOLT 1M X 16 EDO PAGE MODE CMOS DYNAMIC RAM 3.3100万16 EDO公司页面模式的CMOS动态随机存储器
|
Mosel Vitelic, Corp.
|
| 23C1611-10 23C1611-12 |
5 Volt 16-Mbit (2M x 8 / 1M x 16) Mask ROM with Page Mode
|
Macronix International Co., Ltd.
|
| MX23L1611TI-12 23L1611-10 23L1611-12 MX23L1611 MX2 |
3.3 Volt 16-Mbit (2M x 8 / 1M x 16) Mask ROM with Page Mode
|
MCNIX[Macronix International]
|
| AT49BV6416T-70TI AT49BV6416-70TU AT49BV6416-70TI |
64-megabit (4M x 16) Page Mode 2.7-volt Flash Memory
|
Atmel Corp.
|
| S70GL01GN00 S70GL01GN0007 |
1024 Megabit, 3.0 Volt-only Page Mode Flash Memory Featuring 110 nm MirrorBit垄芒 Process Technology
1024 Megabit, 3.0 Volt-only Page Mode Flash Memory Featuring 110 nm MirrorBit Process Technology
1024 Megabit, 3.0 Volt-only Page Mode Flash Memory Featuring 110 nm MirrorBit?/a> Process Technology
|
SPANSION
|
| S29GL512P11TAI012 S29GL-P S29GL512P11TAI010 S29GL5 |
3.0 Volt-only Page Mode Flash Memory featuring 90 nm MirrorBit Process Technology
|
SPANSION[SPANSION]
|
| V53C364805A |
3.3 Volt 8M X 8 EDO Page Mode CMOS Dynamic RAM(3.3V 8Mx8 EDO页面模式CMOS动态RAM)
|
Mosel Vitelic, Corp.
|
| AT28LV010NBSP AT28LV010 |
1M bit EEPROM with 128-Byte Page & Software Protection, 3.0-Volt
From old datasheet system
|
Atmel Corp
|
